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PD -94003
IRF7706
HEXFET(R) Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel
VDSS
-30V
RDS(on) max
22m@VGS = -10V 36m@VGS = -4.5V
ID
-7.0A
-5.6A
Description
HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D S S G
D
8 7
G
6
S
8= 7= 6= 5= D S S D
5
signer with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -7.0 -5.7 -28 1.51 0.96 0.01 20 -55 to + 150
Units
V A W W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
83
Units
C/W
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IRF7706
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -30 --- --- --- -1.0 6.9 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.015 --- --- --- --- --- --- --- --- 48 8.5 8.4 17 46 244 122 2211 339 207
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 22 VGS = -10V, ID = -7.0A m 36 VGS = -4.5V, ID = -5.6A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -7.0A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 72 ID = -7.0A --- nC VDS = -15V --- VGS = -10V 25 VDD = -15V, VGS = -10V 69 ID = -1.0A ns 366 RG = 6.0 183 RD = 15 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 34 32 -1.5 A -28 -1.2 51 48 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, I F = -1.5A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10sec.
Pulse width 300s; duty cycle 2%.
2
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IRF7706
100
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
100
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
-2.5V
1
1
-2.5V 20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -7.0A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 C
1.0
TJ = 25 C
1
0.5
0.1 2.0
V DS = -15V 20s PULSE WIDTH 2.5 3.0 3.5 4.0 4.5 5.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7706
3200 2800
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
16 14 12 10 8 6 4 2 0 0
ID = -7.0A V DS=-24V V DS=-15V
C, Capacitance (pF)
2400 2000 1600 1200 800
Ciss
Coss
400 0 1 10 100
Crss
10
20
30
40
50
60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 150 C
-ID , Drain Current (A) I
100us 10 1ms
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.5 0.8 1.1 1.4
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7706
8.0
VDS
7.0
RD
VGS
-ID , Drain Current (A)
6.0 5.0
D.U.T.
+
VGS
4.0 3.0
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
2.0 1.0
VGS
td(on) tr t d(off) tf
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
100 D = 0.50
Thermal Response (Z thJA )
0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 PDM t1 t2
0.1 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
RG
VDD
5
IRF7706
RDS ( on ) , Drain-to-Source On Resistance ( )
( RDS(on), Drain-to -Source On Resistance )
0.060
0.100
0.080
0.040
ID = -7.0A
0.060 VGS = -4.5V 0.040 VGS = -10V 0.020
0.020
0.000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
0.000 0 5 10 15 20 25 30 35 40 45 50 55 60 -ID , Drain Current ( A )
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
QGS VG
QGD
VGS
-3mA
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
10 V
D.U.T.
-
VDS
IRF7706
TSSOP-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
LOT CODE (XX) PART NUMBER
DAT E CODE (YW)
XXYW 7702
T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF
24 25 26
X Y Z
T ABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51 52
X Y Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
16 mm
O 13"
16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541.
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IRF7706
TSSOP-8 Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00
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